We have developed a low-GWP alternative gas to c-C4F8 for use in the Bosch process, specifically targeting the through silicon via (TSV) process in the three-dimensional (3D) integration of semiconductor devices. Through virtual experiments utilizing digital twins, we found that CH2=CF2 gas exhibited lower environmental impact (GWP < 1), higher deposition rates (DR), and enhanced etching resistance compared to c-C4F8. We also investigated the deposition mechanism of CH2=CF2 by examining the plasma state.
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Ishibushi et al. (2025) studied this question.
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