On the Voltage Induced by an Electron Beam in a Bulk Semiconductor Crystal

It is known that a voltage is induced by an electron beam as well as a light beam in a semiconductor crystal bar in which the resistivity is inhomogeneous. In this paper the voltage induced by an electron beam is considered and equations for the induced voltage are theoretically derived on a one-dimensional model for three special cases: linear, periodic and abrupt resistivity-change. For the case of periodic resistivity-change, good agreement with experiment is obtaind: in n-type Ge bar the calculated and the observed values are 7.9 µV and 6 µV respectively under the conditions that the beam current, the energy of the electrons, the change of the resistivity and the periodic length are 2.5 mµA, 20 KeV, 1 Ωcm and about 0.024 cm, respectively.