Influence of High Temperature in the Growth of Low Dislocation Content AlN Bridge Layers on Patterned 6H-SiC Substrates by Metalorganic Vapor Phase Epitaxy

A novel high temperature metalorganic vapor phase epitaxy (MOVPE) growth of AlN bridge layer is reported. Positive influence of high temperature on the growth rate and reduction of dislocation content in the AlN bridge layer has been observed. Transmission electron microscopy, X-ray diffraction, and atomic force microscopy analyses confirmed that the layer had high structural quality and smooth morphology.