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In x Ga 1- x N has attracted considerable interest as a material for multi junction solar cells. In this study, we performed thermodynamic analyses to calculate the relationship between the input In molar ratio and solid composition of a coherently grown In x Ga 1- x N thin film that is subjected to planar compressive or tensile stress. The theoretical approach incorporates energy loss of a thin-film system due to lattice constraint from the substrate. The results show that the indium composition x of coherently grown In x Ga 1- x N is lower than that of stress-free InGaN. This represents the composition pulling effect.
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Yayama et al. (2009) studied this question.
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