Conversion of F‐HA Pairs into α‐IA Pairs in KBr:Li and KBr:Na X‐Rayed at 80 K

An optical method is used to investigate the dependence of the number of defects, created by X‐irradiation at 80K (F, α, HA, V4, V4A, and IA, centres), on the impurity concentration in KBr:Li and KBr:Na. It is revealed that the amount of α‐IA pairs in the total anion defect number increases (approximately up to 90%) and the amount of F‐HA pairs decreases with the increase of the impurity concentration. As a reason the tunnel recharge of neutral primary F‐HA pairs into charged α‐IA pairs is considered, the probability of which increases with the decrease of the distance between the partners (i.e. with the enhancement of the impurity concentration).