A model explaining the temperature dependence of the efficiency of F-centre accumulation (as well as F2-centre destruction), observed in the course of steady-state experiments, has been developed. The model takes into account three- (or one-) dimensional continuous diffusion of H centres, resulting in a primary process, and their decay due to the diffusion-controlled: (i) annihilation, (ii) tunnelling recombination with F centres and (iii) localization by pre-existing defects (or recombination with F2 centres).
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Kotomin et al. (1977) studied this question.
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