The high resolution electron microscopy of stacking defects in Cu–Zn–Al shape memory alloy

Summary The characteristic defects in the martensitic phase of the memory alloy Cu–Zn–Al have been investigated using the Cambridge University 600 kV High Resolution Electron Microscope. Conditions are found under which the images can be quantitatively simulated when this involves the transfer of structural information at resolutions beyond the first zero of the contrast transfer function. Defects of sequence‐type were positively identified by the comparison of high‐resolution micrographs with full dynamical image simulations.