In this paper, the operation and effects of radiation on Programmable Metallization Cells (PMC) memory and selector devices are analyzed and discussed. The Ag- or Cu-Ge30Se70devices demonstrate non-volatile memory switching characteristics while the Ag- or Cu-SiO2devices show a volatile threshold switching property. The impact of total ionizing dose from gamma-ray irradiation on both device types is investigated experimentally. It is found that the virgin and high-resistance state of Ge30Se70memory devices degrade after gamma-ray exposure while they are well preserved in SiO2selector devices.
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Chen et al. (2016) studied this question.
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