The nanometer-range depth resolution of secondary ion mass spectrometry (SIMS) profiles in diamond was achieved by the determination of the depth resolution function (DRF). The measurement of this DRF was performed thanks to isotopic-enriched diamond delta structures composed of 12 C and 13 C. The artificial SIMS broadening observed on the 13 C depth profiles of buried doped diamond epilayers was eliminated and replaced by a boxlike 13 C depth profile. Applied to boron delta-doped diamond structures, this analysis has resolved edge widths close to 0.3 nm/dec, as compared with 1.5 nm/decade on the raw SIMS data.
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Fiori et al. (2013) studied this question.
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