X-ray diffraction characterization of Sb delta doping in Si

This communication demonstrates the use of high precision X-ray diffraction together with dynamical X-ray simulation theory in the non-destructive characterization of an Sb delta doped layer in (100) Si. The width of the delta layer is determined to be <2 nm. Information is also obtained on the strain fields induced by the Sb delta layer, indicating a total lattice expansion in the (100) direction of 0.046 nm.