I n s i t u doping by As ion implantation of silicon grown by molecular-beam epitaxy

The incorporation and electrical activation of As, implanted in situ during molecular-beam epitaxial growth of epilayers on Si(100), is reported. Parameters varied included growth temperature (460–700 °C), implantation energy (500–1000 eV), and concentration (1017→>1020/cm3 ). In general, the material was excellent with 100% activation and bulk mobilities for concentrations up to the equilibrium solid solubility limit and carrier densities in excess of five times this limit in highly doped samples.