The complex permittivity of lightly doped Bi 2 Sr 2 YCu 2 O 8+δ was measured in order to investigate the carrier dynamics near the insulator-to-metal transition. By suppressing the extrinsic polarization due to some contact effects, we found a rapid rise in the c -axis dielectric constant ε c ′ with increasing temperature at T M ∼225 K. Below T M , the thermally activated carrier movement seemed to be limited within the a b plane. We showed that the ε c ′ behavior is related to a two-step carrier-conduction development observed in the polycrystalline sample. We also found another ε c ′ anomaly in its temperature dependence.
No takes yet. Share an insight, caveat, or question.
Maki et al. (2007) studied this question.
Synapse has enriched 5 closely related papers on similar clinical questions. Consider them for comparative context: