We use a six-band effective-mass theory to calculate the rate of tunneling of heavy holes in two kinds of GaAs/AlAs semiconductor microstructure: a multiple-quantum-well system with alternating wide and narrow quantum wells and, for comparison, a double-barrier structure. Our results take account of valence-band mixing induced by confinement of the carriers and for the two structures considered are obtained from effective-mass generalizations of, respectively, Bardeen's transfer-Hamiltonian method and Gamow's method for resonant states. After correcting for uncertainties in the band-structure parameters, we find good agreement with time-resolved photoluminescence experiments on the multiple-quantum-well structure.
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Malik et al. (1999) studied this question.
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