Materials evaluation demonstrates a porous oxycarbosilane spin-on dielectric with dielectric constant below 2.0, indicating readiness for microelectronic manufacturing.
A Manufacturing Grade, Porous Oxycarbosilane Spin-On Dielectric Candidate with K ≤ 2.0, Volksen, Willi, Magbitang, Teddie P., Miller, Robert D., Purushothaman, Sampath, Cohen, Stephan A., Nakagawa, Hisashi, Nobe, Youhei, Kokubo, Terukazu, Dubois, Geraud J. M.
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Volksen et al. (2011) studied this question.
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