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A method is proposed to increase the emission wavelength from structures grown on GaAs substrates by inserting a strained InAs quantum dot array into an external InGaAs quantum well. The dependence of the luminescence peak position on the active region design was investigated for structures grown by this method. Room-temperature photo-and electroluminescence spectra in the 1.3-µm wavelength range are compared.
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Zhukov et al. (1999) studied this question.
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