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We report on the room-temperature hole-mediated ferromagnetism in Zn 1- x Mn x O thin films. Zn 1- x Mn x O ( x = 0.03 and 0.20) films were prepared on GaAs (001) substrates by the rf magnetron cosputtering method. At the substrate temperature high enough to activate As diffusion from GaAs substrates, p-type Zn 1- x Mn x O films were synthesized. The superconducting quantum interference device (SQUID) and alternating gradient magnetometer (AGM) results clearly showed ferromagnetic characteristics at room temperature.
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Jeong et al. (2004) studied this question.
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