Transport properties of p-type phosphorus-doped (Zn,Mg)O grown by pulsed-laser deposition

We report on carrier type in phosphorus-doped (Zn,Mg)O films grown by pulsed-laser deposition under a broad range of conditions. For film growth at 500°C, increasing the oxygen partial pressure from 20to200mTorr yielded a carrier type conversion from n to p type. Transport characteristics of as-grown P-doped (Zn,Mg)O films were determined by Hall-effect measurements at room temperature. The P-doped (Zn,Mg)O films grown at 150mTorr oxygen partial pressure were marginally p type and exhibited a hole concentration of 2.7×1016cm−3, a mobility of 8.2cm2∕Vs, and a resistivity of 35Ωcm. The films exhibited good crystallinity with c-axis orientation. These results indicate the importance of oxidation conditions in realizing p-type (Zn,Mg)O films.