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A CaF2 single crystal has been grown on Si(111) by ionized cluster beam (ICB) epitaxial technique at a low temperature of around 420°C. A streaky reflection high energy electron diffraction (RHEED) pattern was observed for layers grown with electron ionization current I e=400 mA, whereas the pattern was ring-shaped when I e=100 mA. The acceleration voltage dependence of crystallinity was obtained by Rutherford backscattering spectroscopy, and the most suitable acceleration voltage for crystallinity was found to be V a=1-2 kV at I e=400 mA.
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Watanabe et al. (1990) studied this question.
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