Laser diodes based on a novel active zone, namely type II Ga0.50In0.50As/GaSb quantum wells where the Ga0.50In0.50As layers are under high tensile strain (3.9 %), have been investigated. Broad area diodes lased up to room temperature in the pulsed regime. Laser emission is centred at ∼2.3 µm, a technologically important wavelength, with a threshold-current density of 1.6 kA/cm2 and a characteristic temperature T0 = 50 K.
No takes yet. Share an insight, caveat, or question.
Gassenq et al. (2009) studied this question.
Synapse has enriched 5 closely related papers on similar clinical questions. Consider them for comparative context: