The growth of highly strained GaInAs quantum wells on GaAs is investigated in the presence of Sb. Sb appears as an adequate isoelectronic surfactant: the lateral relaxation of strain is shown to be significantly delayed in comparison with a Sb-free growth. This effect is used to extend the emission wavelength of GaInAs quantum wells. We obtained a 9-nm-thick Ga0.59In0.41As0.986Sb0.008 quantum wells with smooth interfaces, emitting at 1.27 μm at room temperature.
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Harmand et al. (2004) studied this question.
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