Strained multiquantum-well InGaAs lasers had CW thresholds near 50 mA at 2 µm at 312 K. Abrupt decreases in characteristic temperatures (To) occurred at 250 K for threshold current and 273 K for external quantum efficiency, indicating a highly temperature sensitive nonradiative recombination mechanism.
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Martinelli et al. (1994) studied this question.
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