High-quality highly strained InGaAs quantum wells grown on InP using (InAs)n(GaAs)0.25 fractional monolayer superlattices

( InAs ) n /( GaAs ) m (n=1.5–2, m=0.25 monolayer) fractional monolayer superlattices (FMS) have been used to grow highly strained InGaAs quantum wells (QWs) on InP by molecular beam epitaxy. We show that FMS quantum wells have better structural and optoelectronic properties compared to equivalent QWs grown using standard procedures. In addition, the onsets of the three-dimensional growth mode and plastic relaxation are delayed, which allows the highest emission wavelength in the InxGa1−xAs/InGaAlAs/InP system to be extended up to 2.35 μm at high growth temperatures (500 °C).