High power 2-μm room-temperature continuous-wave operation of GaSb-based strained quantum-well lasers

A high power GaSb-based laser diode with lasing wavelength at 2 μm was fabricated and optimized. With the optimized epitaxial laser structure, the internal loss and the threshold current density decreased and the internal quantum efficiency increased. For uncoated broad-area lasers, the threshold current density was as low as 144 A/cm 2 (72 A/cm 2 per quantum well), and the slope efficiency was 0.2 W/A. The internal loss was 11 cm −1 and the internal quantum efficiency was 27.1%. The maximum output power of 357 mW under continuous-wave operation at room temperature was achieved. The electrical and optical properties of the laser diode were improved.