Despite intensive investigations of Bi2Se3 in past few years, the size and nature of the bulk energy band gap of this well-known 3D topological insulator still remain unclear. Here we report on a combined magneto-transport, photoluminescence and infrared transmission study of Bi2Se3, which unambiguously shows that the energy band gap of this material is direct and reaches E g = (220 ± 5) meV at low temperatures.
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Martínez et al. (2017) studied this question.
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