A resonant-cavity enhanced, separate absorption, charge, and multiplication avalanche photodiode using GaAs0.8Sb0.2 quantum wells on GaAs has been demonstrated. The device exhibited high gain and <1 nA dark current at 90% of breakdown. Peak quantum efficiency of 93% and full-width at half-maximum of 7 nm were observed at 1.064 µm.
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Sidhu et al. (2004) studied this question.
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