Demonstration of boron arsenide heterojunctions: A radiation hard wide band gap semiconductor device

B 12 As 2 / SiC pn heterojunction diodes based on the radiation-hard B12As2 deposited on (0001) n-type 4H–SiC via chemical vapor deposition were demonstrated. The diodes exhibit good rectifying behavior with an ideality factor of 1.8 and a leakage current as low as 9.4×10−6 A/cm2. Capacitance-voltage measurements using a two-frequency technique showed a hole concentration of ∼1.8–2.0×1017 cm−3 in B12As2 with a slight increase near the interface due to the presence of an interfacial layer to accommodate lattice mismatch. Band offsets between the B12As2 and SiC were estimated to be ∼1.06 eV and 1.12 eV for conduction band and valance band, respectively.