An IR sensitive, real-time imaging technique based on a photoelectrochemical cell

A real-time imaging technique based on optical saturation phenomena in photoelectrochemical cells has been developed. The long-wavelength spectral sensitivity of these devices extends to the band-gap energy of the semiconductor photoelectrode employed. An image resolution of 180 μ and a response time of better than 100 ms has been obtained with an n-GaAs cell.