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The modulation of the spectral reflectivity of a semiconductor-electrolyte interface has been observed in the deep infrared (200-600 cm^-1). In n-type Ge and GaAs the resulting electroreflectance spectra show pronounced characteristic structure, with peak modulation of several percent. These observations can be understood as resulting from a depletion region of variable thickness at the semiconductor interface which acts as a dielectric optical coating. More detailed considerations predict "resonances" in the modulation near lattice reststrahl and free-carrier plasma frequencies, as observed.
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Axe et al. (1967) studied this question.
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