Electrical and Electromechanical Properties of PbZrO3 Thin Films Prepared by Chemical Solution Deposition

Electrical and electromechanical properties of PbZrO3 (PZ) thin films deposited on Pt/Ti/SiO2/Si by chemical solution deposition were investigated. Precursor solutions with the Pb/Zr atomic ratio of 1.1 were used. The PZ thin films annealed at 650°C and 700°C for 1 h exhibited a double hysteresis loop, indicating that electric-field-induced antiferroelectric-to-ferroelectric phase transformation occurred at room temperature. The switching field diminished with increases in measurement temperature, and at 220°C, the polarization hysteresis loop became that of a ferroelectrics. A rectangular displacement hysteresis loop and maximum strains of 6.4–6.8×10-3 were observed.