Room-temperature band-to-band luminescence is studied to evaluate the results of rapid lamp annealing of ion-implanted InP. Because of the high sensitivity of luminescence to the presence of low concentrations of deep level defects, this technique may be used successfully to characterize the quality of the annealed layers. Heat pulse annealing of SiO2-capped samples at 950 °C results in material that is better than that obtained by oven annealing, with no sign of surface decomposition.
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Kirillov et al. (1984) studied this question.
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