The Temperature and Pressure Dependence of the Dielectric Properties of Disordered and Ordered Pb(In 1/2Nb 1/2)O 3 Single Crystals

Dielectric properties of the disordered and ordered Pb(In 1/2 Nb 1/2 )O 3 (abbreviated as PIN) single crystals were investigated in the range of temperature T from -70 to 200°C and of hydrostatic pressures p up to 0.7 GPa. For the disordered PIN, a typical dielectric dispersion which obeys the empirical Vogel-Fulcher relation was observed. Such dielectric dispersion strength was weakened with an increase in the degree of chemical ordering (S) at the B-site cations in the perovskite ABO 3 , and then relaxor behavior disappears. The relaxor behavior was also weakened with increasing pressure up to 0.7 GPa for the quenched disordered PIN with S=0.2, whereas for the disordered PIN with S=0.4, the relaxor behavior was weakened with increasing pressure and then the antiferroelectric phase transition was induced by the application of pressure above 0.4 GPa. For the ordered PIN, the phase below the transition temperature was confirmed to be antiferroelectric by observation of P - E double hysteresis loops. The stability in the antiferroelectric phase was enhanced by S and also by the application of pressure.