Zirconium-Doped Hafnium Oxide High-k Dielectrics with Subnanometer Equivalent Oxide Thickness by Reactive Sputtering

Ultrathin zirconium-doped hafnium oxide high dielectric constant films, e.g., with an equivalent oxide thickness less than , have been prepared by high-power sputtering and low oxygen content annealing conditions on the p-type substrate. The influence of the process conditions on the film's material and electrical properties were investigated with X-ray photoelectron spectroscopy analysis and electrical measurements. The low equivalent oxide film also shows a small charge trapping density, a low leakage current density, and a moderate interface state density. This is a viable gate dielectric film for future complementary metal oxide semiconductor devices.