The surface of strained InGaAs films for selective regrowth of InAs nanostructures is investigated by atomic force microscopy and Rutherford backscattering. 3.3-nm-thick In0.33Ga0.67As films were annealed at temperatures between 400 and 800 °C. Significant indium desorption was found to occur at temperatures above 550 °C. The optimum parameters are presented for selective growth of InAs quantum dots having densities of 6.6×1010 cm−2 on In0.33Ga0.67As films.
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Yeoh et al. (2004) studied this question.
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