Transconductance improvement in surface-channel SiGe p-metal-oxide-silicon field-effect transistors using a ZrO2 gate dielectric

Silicon and surface-channel SiGe p-metal-oxide-silicon field-effect transistors (p-MOSFETs) using a ZrO2 gate dielectric with equivalent oxide thickness (EOT) less than 20 Å was fabricated. These p-MOSFETs show similar behavior to that of other high-k gate dielectric p-MOSFETs reported in the literature, and mobility enhancement is observed in the surface-channel SiGe p-MOSFETs.