A model for laser induced diffusion is proposed, assuming the melting of Si surface under pulsed laser irradiation and the diffusion, in liquid phase, of a thin film deposited impurity. Depending on the thickness of the film, it results in a dopant distribution profile with a surface disordered layer induced either by segregation effects or precipitation of the dopant in excess of the solubility limit achieved by laser annealing. Experimental results obtained for a ruby laser irradiation of thin films of various dopants such as Sb, Ga, Bi, and In deposited on Si substrates are in good agreement with the model.
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Fogarassy et al. (1983) studied this question.
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