High-resolution photoemission is applied to the oxygen adsorption on the Si(001) surface at 120 K and the subsequent evolution of the adsorbates upon annealing. Si 2p components due to the Si2+ and Si3+ species are observed from the very early stage of adsorption at ∼120 K, which grow linearly with the oxygen coverage. This indicates an active agglomeration of oxygen adsorbates even for the submonolayer adsorption at low temperature. Annealing above 500 K enhances the agglomeration by mostly converting the Si1+ species into Si3+ and then into Si4+. In addition, the annealing changes the Si 2p binding energies for the Si2+ and Si3+ species by 0.14 and 0.23 eV, respectively. These shifts are attributed to the structural relaxation (strain relief) of the metastable oxygen-adsorbate complex formed at low temperature.
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Yeom et al. (2000) studied this question.
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