We have measured the photomission intensity versus photon energy curves of the Sn 4d5/2 level in SnS and SnS₂ and the In 4d5/2 and Se $3d$ levels in InSe up to 110 eV above threshold. The structure observed in these curves is mostly due to nearest-neighbor backscattering. This raises the possibility of surface extended x-ray-absorption fine-structure experiments by photomission intensity measurements.
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Margaritondo et al. (1979) studied this question.
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