The surface structure of alumina-supported gallium oxide catalysts for selective catalytic reduction of NO by CH 4 was studied. The XPS results showed that Ga atoms were dispersed well over the Al 2 O 3 surface for the samples with Ga 2 O 3 content below monolayer coverage (27 wt %) and that Ga 2 O 3 particles appeared at higher content. The XANES and EXAFS results revealed that, below monolayer coverage, Ga atoms were located at the surface cation sites (tetrahedral and octahedral) of Al 2 O 3, and the fraction of tetrahedral Ga species decreased as Ga content increased. The activity per surface area of the catalysts increased with Ga 2 O 3 content up to around the monolayer coverage and declined at higher content. Below monolayer coverage, the activity per exposed Ga atom decreased as Ga content increased, which correlated well with the change in the fraction of tetrahedral Ga species. It was concluded that the present reaction is a structure-sensitive reaction depending on the local structure of Ga atom; GaO 4 tetrahedra highly dispersed in the surface spinel are responsible for the activity.
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Shimizu et al. (1999) studied this question.
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