Carrier collection efficiency versus voltage characteristics were studied in detail in HgI2 photon detectors of various thicknesses for the 5.9-keV x-ray emission of 55Fe. The results prove the important role of carrier surface recombination in limiting the carrier collection, and its consequences on the detector performances. Electron and hole surface recombination velocities in our samples were about 104 cm/sec. Hole trapping times were about 10−6 sec, while electron trapping times were much longer than ∼10−5 sec.
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Levi et al. (1983) studied this question.
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