The mechanical properties of sputter-deposited HfO2 and HfxSi1-xO2 films were studied as a function of composition using nanoindentation. The elastic modulus and hardness were measured at room temperature for as-deposited films of varying Hf content and for films subjected to annealing at 1000 °C. The elastic modulus and hardness of as-deposited films were found to increase monotonically with increasing HfO2 content, with the hardness increasing from 5.0 ± 0.3 GPa for pure SiO2 to 8.4 ± 0.4 GPa for pure HfO2. All films were found to be harder after annealing at 1000 °C, with the increase for SiO2 films attributed to densification of the SiO2 network and that for the HfxSi1-xO2 films to a combination of phase separation, densification, and crystallization.
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Venkatachalam et al. (2011) studied this question.
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