Electrical Characterization of Capacitors with AVD-Deposited Hafnium Silicates as High-k Gate Dielectric

We discuss the electrical properties of hafnium silicates with various composition deposited by atomic vapor deposition (AVD) as metal-oxide-semiconductor (MOS) capacitors. The deposited layers demonstrate well-behaved capacitance as function of gate voltage curves with a leakage as low as 5 × 10 −2 for an equivalent oxide thickness (EOT) of . The permittivity ( -value) ranges from 6 to 14 depending on the composition of the hafnium silicate. Flatband voltage depends on the composition (and thickness) and varies between and , from which we calculated the amount of net charge in the layer, between × 10 11 and . Postdeposition treatments at in or shift the position up to , together with a change of the amount of net charge. Fine-tuning the deposition and composition might nullify the net charge contribution in the layers.