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The elecstronic properties of n-type CdIn2Te4 crystals were investigated. The mobility and carrier concentration were measured using Hall techniques. I-V and C-V measurements were performed on Al/n-CdIn2Te4 Schottky barrier devices. The I-V data are interpreted in terms of space-charge-limited currents. The dominant electron trap level has been determined to be 0.21 eV below the conduction band. The barrier height was found to be approximately 0.65 eV.
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Ou et al. (1985) studied this question.
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