The authors report on highly responsive ultraviolet (UV)-sensitive field-effect transistor based on amorphous thin films of organic donor/acceptor dyad. An optimal responsivity of up to 6.5A∕W can be obtained for UV light at 370nm. High ratios of photocurrent to dark current of up to 4.3×103 can also be obtained. The underlying mechanism can be sufficiently explained by ultrafast photoinduced intramolecular charge transfer between the acceptor and the donor. This result offers a potential application of organic semiconductors as active materials for UV detectors.
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Saragi et al. (2007) studied this question.
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