Photoelectron core-level spectra are measured for the interfaces RbF/GaAs(100) and LiF/GaAs(100). It is found that RbF, of which the lattice almost matches the GaAs lattice, is epi- taxially grown and a F-Ga interface bonding was observed. LiF with a large mismatch to GaAs dissociates after annealing the surface and induces a reconstruction of the GaAs surface. We discuss the present results as compared with our previous investigations of NaF and KF on the same GaAs(100) surface.
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Klauser et al. (1989) studied this question.
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