Defect induced mobility enhancement: Gadolinium oxide (100) on Si(100)

Growth of predominantly single crystal (100)-oriented gadolinium oxide (Gd2O3) on a p-type Si(100) and growth of a polycrystal with a predominant Gd2O3(100) crystallite on a n-type Si(100) was performed using molecular beam epitaxy. Despite a poorer crystal structure than Gd2O3(110), an enhancement in carrier mobility can be found only from the Gd2O3(100)/n-type Si(100) interface. The mobility of 1715-1780 cm2/V · s was observed at room temperature, for carrier concentration >1020 cm−3. This accumulation of the electrons and the mobility enhancement may arise from the two-dimensional confinement due to charge transfer across the interface similar to transfer doping.