Variable growth modes of CaF2 on Si(111) determined by x-ray photoelectron diffraction

Chemical discrimination of bulk and interface Ca 2p x-ray photoelectron diffraction modulations is used to identify three growth regimes during the initial stages of CaF2 epitaxy on Si(111). Low flux, high temperature conditions produce island growth atop a nonwetting, chemically reacted Ca-F interface layer. Changing the growth kinetics by increasing the flux produces more laminar growth. Lowering the substrate temperature produces a more stoichiometric CaF2 interface layer that results in immediate wetting and laminar growth.