Carrier confinement photoconductive detector

We propose a new device, the carrier confinement photoconductive detector, in which an improvement in performance over a conventional photoconductor is achieved by confinement of photogenerated carriers in the active channel. The confinement can be realized by placing a layer of a wide band-gap semiconductor between the channel and ohmic contact. Analytical and numerical analyses show that gain-bandwidth improvement of 100% can be achieved by using the GaAl/AlGaAs system.