Tin selenide films have been grown by the hot wall epitaxy technique onto glass substrates. Experimental deposition conditions are optimized to obtain better crystallinity and deposition rate. Grain size as large as 4 μm has been obtained. It has been observed that the electrical conductivity and the carrier mobility of SnSe films are comparatively higher than those obtained by conventional evaporation techniques. Analysis of optical absorption measurements indicate that the absorption edge of SnSe films is due to an allowed direct transition of energy about 1.22 eV.
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Singh et al. (1990) studied this question.
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