Extended defect evolution in boron-implanted Si during rapid thermal annealing and its effects on the anomalous boron diffusion

Effects of extended defect evolution on the anomalous diffusion of ion-implanted boron during rapid thermal annealing (RTA) have been studied using transmission electron microscopy and secondary-ion mass spectroscopy. It has been found that for low-dose boron implants (<1×1014 cm−2), no extended defects can be observed after RTA at 1000 °C, and the anomalous diffusion saturates within less than 10 s. However, extended defects are developed for high-dose boron implants (>5×1014 cm−2), and the anomalous diffusion persists for a much longer time and is dose dependent. Extended defect evolution has been characterized and correlated with the observed anomalous boron diffusion behaviors.