Determination of Shear Deformation Potentials from the Free-Carrier Piezobirefringence in Germanium and Silicon

The present investigations of the free-carrier piezobirefringence phenomenon verify that in n-type germanium and silicon as well as in p-type silicon this effect can be ascribed to intraband transitions of the carriers. It is demonstrated how a combined investigation of the low-stress and high-stress piezobirefringence in these materials provides a direct and independent method for determining deformation-potential constants. For n-type germanium we obtain Ξᵤ=18.0±0.5 eV, for n-type silicon Ξᵤ=8.5±0.4 eV; for p-type silicon a rather crude analytical approximation yields b=-3.1 eV and d=-8.3 eV. Finally, experimental evidence is given to support the assumption, that in p-type germanium intraband transitions alone cannot account for the free-carrier piezobirefringence.